Semiconductor integrated circuit having a multilayer wiring stru

Details Semiconductor integrated circuit having a multilayer wiring stru Semiconductor integrated circuit having a multilayer wiring stru

1991-03-27

1992-10-13

Hille, Rolf

357 54, H01L 2354

Patent

active

051555760

ABSTRACT:
A semiconductor integrated circuit is constituted, by forming selectively a first insulation film on a lower layer wiring metal; after covering a lateral wall of the lower layer wiring metal with a second insulation film, embedding a material having a low dielectric constant in the lower layer wiring so as to flatten the surface thereof. A third insulation film is formed over the entire surface, and through holes are made in the first and the third insulation films on the lower layer wiring so as to connect the lower layer wiring to the upper layer wiring through the through holes. Thus, it is possible to realize a layer insulation film having very good flatness, to realize a multilayer wiring having high reliability in which corrosions, etc., are not caused in the wiring metal containing through hole portions, and to make the coated films thicker, which films have a low dielectric constant and can be relatively easily formed, so that the wiring capacity can be decreased.

REFERENCES:
patent: 4040083 (1977-08-01), Saiki et al.
patent: 4204894 (1980-05-01), Komeda et al.
patent: 4561009 (1985-12-01), Yonezawa et al.

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