Patent
1991-07-25
1992-10-13
Mintel, William
357 39, 357 37, H01L 2974, H01L 29747, H01L 2900
Patent
active
051555697
ABSTRACT:
A thyristor structure comprises a p.sup.+ -type substrate (21), an n-type base layer (22), a first p-type diffusion region (23) and an n.sup.+ -type diffusion region (25). A MOS structure comprises the base layer (22), first and second p-type diffusion regions (23, 24) and the n.sup.+ -type diffusion region (25). A positive voltage is applied to a gate electrode (27) to form a channel in a portion of the first diffusion region (23) just under the gate electrode (27), so that a cathode electrode (28) supplies carriers to the base layer (22) through the n.sup.+ -type diffusion region (25) and the channel, to turn on the thyristor. A negative voltage is applied to the gate electrode (27) to form a channel in a portion of the base layer (22) just under the gate electrode (27), so that the first p-type diffusion region (23) and the n.sup.+ -type diffusion region (25) are shorted through the channel, the second p-type diffusion region (24) and the cathode electrode (28), to turn off the thyristor.
REFERENCES:
patent: 4857983 (1989-08-01), Baliga et al.
patent: 4967244 (1990-10-01), Bauer
"MOS-Controlled Thyristors--A New Class of Power Devices", IEEE Transactions on Electron Devices, vol. ED-33, pp. 1609-1618, 1986.
"The MOS Depletion-Mode Thyristor: A New MOS-Controlled Bipolar Power Device", IEEE Electron Device Letters vol. 9, 1988.
Fahmy Wael
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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