Method of forming localized epitaxy and devices formed therein

Details Method of forming localized epitaxy and devices formed therein Method of forming localized epitaxy and devices formed therein

1983-05-13

1986-01-28

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576E, 29576W, 29578, 148175, 148187, 357 42, 357 91, H01L 2120, H01L 21265

Patent

active

045669147

ABSTRACT:
An integrated circuit structure for isolating circuit structures in closely packed integrated circuits, and a method for making the same. The isolation structure includes a semiconductor body having a surface, an insulatory layer on the surface having an aperture and an offset adjacent to the aperture, the aperture and offset being filled with epitaxial semiconductor material, at least a portion of the epitaxial material being single crystal semiconductor, said structure being used for the fabrication of standard semiconductor devices. The method uses conventional processing techniques that require a minimum of additional cost over prior art, and yet provide a high degree of device isolation and density.

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Miyao et al. in "Laser-Solid Interactions and Transient Thermal Processing of Materials," ed. Narayan et al., North-Holland, N.Y., Nov. 1982, p. 499.

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