Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1995-02-03
1996-01-09
Berman, Jack J.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, 250396R, 315506, H01J 37317
Patent
active
054830770
ABSTRACT:
Deflection apparatus is shown for high perveance ion beams, operating at 20 Hz fundamental and substantially higher order harmonics, having a magnetic structure formed of laminations with thickness in range between 0.2 and 1 millimeter. Additionally, a compensator is shown with similar laminated structures with resonant excitation circuit, operating at 20 Hz or higher, in phase locked relationship with the frequency of the previously deflected beam. Furthermore, features are shown which have broader applicability to producing strong magnetic field in magnetic gap. Among the numerous important features shown are special laminated magnetic structures, including different sets of crosswise laminations in which the field in one lamination of one set is distributed into multiplicity of laminations of the other set of coil-form structures, field detection means and feedback control system, cooling plate attached in thermal contact with number of lamination layers. Surfaces on the entry and exit sides of the compensator magnetic structure have cooperatively selected shapes to increase the length of path exposed to the force field dependently with deflection angle to compensate for contribution to deflection angle caused by higher order components. The entry and exit surfaces of the magnetic scanner and compensator structures cooperating to produce desired beam profile and desired limit on angular deviation of ions within the beam. Also shown is an accelerator comprising a set of accelerator electrodes having slotted apertures, a suppressor electrode at the exit of the electrostatic accelerator, a post-accelerator analyzer magnet having means for adjusting the angle of incidence by laterally moving the post-accelerator analyzer magnet, and a magnet to eliminate aberration created by the post-accelerator analyzer magnet. In the case of use of a spinning substrate carrier for scanning in one dimension, the excitation wave form of the scanner relates changes in scan velocity in inverse dependence with changes in the radial distance of an implant point from the rotation axis. Also an oxygen implantation method is shown with 50 mA ion beam current, the ion beam energy above 100 KeV, and the angular velocity of a rotating carrier above 50 rpm.
REFERENCES:
patent: 2260725 (1941-10-01), Richards et al.
patent: 3671895 (1972-06-01), Aucouturier et al.
patent: 3707628 (1972-12-01), Bassett et al.
patent: 3778626 (1973-12-01), Robertson
patent: 3859557 (1975-01-01), Grant et al.
patent: 3867635 (1975-02-01), Brown et al.
patent: 4063098 (1977-12-01), Enge
patent: 4140913 (1979-02-01), Anger et al.
patent: 4191887 (1980-03-01), Brown
patent: 4254340 (1981-03-01), Camplan et al.
patent: 4258266 (1981-03-01), Robinson et al.
patent: 4276477 (1981-06-01), Enge
patent: 4335309 (1982-06-01), Anger et al.
patent: 4367411 (1983-01-01), Hanley et al.
patent: 4379231 (1983-04-01), Shii et al.
patent: 4380703 (1983-04-01), Schmitt
patent: 4383180 (1983-05-01), Turner
patent: 4409486 (1983-10-01), Bates
patent: 4417145 (1983-11-01), Norioka
patent: 4455489 (1984-06-01), Brown
patent: 4469948 (1984-09-01), Veneklasen et al.
patent: 4494005 (1985-01-01), Shibata
patent: 4533831 (1985-08-01), Itoh et al.
patent: 4544847 (1985-10-01), Taylor
patent: 4564763 (1986-01-01), Bruel et al.
patent: 4590379 (1986-05-01), Martin
patent: 4633138 (1986-12-01), Tokiguchi et al.
patent: 4634931 (1987-01-01), Taya et al.
patent: 4661712 (1987-04-01), Mobley
patent: 4687936 (1987-08-01), McIntyre
patent: 4726046 (1988-02-01), Nunan
patent: 4736106 (1988-04-01), Kashy et al.
patent: 4745281 (1988-05-01), Enge
patent: 4766320 (1988-09-01), Naitoh et al.
patent: 4775796 (1988-10-01), Purser et al.
patent: 4785188 (1988-11-01), Mori et al.
patent: 4801847 (1989-01-01), Sakudo et al.
patent: 4804852 (1989-02-01), Rose et al.
patent: 4804879 (1989-02-01), Fukumoto
patent: 4922106 (1990-05-01), Berrian et al.
patent: 4980562 (1990-12-01), Berrian et al.
patent: 5012104 (1991-04-01), Young
patent: 5053627 (1991-10-01), Ruffell et al.
patent: 5132544 (1992-07-01), Glavish
patent: 5177366 (1993-01-01), King et al.
M. A. Guerra, "Development of Second Generation Oxygen Implanter", Materials Science and Engineering, B12 (1992), pp. 145-148.
J. H. Freeman, "A Variable Geometry Separator and Low Energy Heavy Ion Accelerator", British Publication dated January 1970.
J. H. Freeman, "Stigmatic Focusing Effects in a Variable Geometry Isotope Separator", British Publication dated Aug. 1970.
Allison, Jr. et al., "Design and Performance of a High Current 200 KeV Electrostatically Scanned Ion Implantation Accelerator", pp. 482-489, Proc. of Sym. on Electron & Ion Beams Sci. & Tech. 7th Int'l Conf. 1976.
Dearnley et al., Ion Implantation, North/Holland Publishing, Amsterdam, 1973, pp. 283-289, 387-409.
Techron Literature discloses various power amplifiers.
Thomson, "Aberrations and Tolerances in a Double-Deflection Electron Beam Scanning System", J. Vac. Sci. Technol., vol. 12, No. 6, Nov./Dec. 1975, pp. 1156-1159.
Berman Jack J.
Nissin Electric Co. Ltd.
LandOfFree
System and method for magnetic scanning, accelerating, and impla does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with System and method for magnetic scanning, accelerating, and impla, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method for magnetic scanning, accelerating, and impla will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1304163