Method for producing of semiconductor device having of channel s

Details Method for producing of semiconductor device having of channel s Method for producing of semiconductor device having of channel s

1995-04-19

1996-01-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 69, 437 28, H01L 2176

Patent

active

054828899

ABSTRACT:
A method for the preparation of semiconductor devices which comprises steps of forming a nitride film on a first conductivity type semiconductor substrate, selectively removing the nitride film, oxidation with the remaining nitride film as the mask to form insulation oxide films for element isolation on the semiconductor substrate, forming a second insulation film on the entire surface of the substrate, and implanting a second conductivity type impurity through the entire surface of the substrate to form second conductivity type channel stoppers under the insulation oxide films.

REFERENCES:
patent: 5173438 (1992-12-01), Sandhu
patent: 5196367 (1993-03-01), Lu et al.
patent: 5254495 (1993-10-01), Lur et al.
patent: 5286672 (1994-02-01), Hodges et al.
patent: 5372951 (1994-12-01), Anjum et al.
patent: 5397727 (1995-03-01), Lee et al.

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