Low-temperature process metal-to-metal antifuse employing silico

Details Low-temperature process metal-to-metal antifuse employing silico Low-temperature process metal-to-metal antifuse employing silico

1994-08-09

1996-01-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437195, 437190, 437922, 148DIG55, H01L 2170

Patent

active

054828848

ABSTRACT:
A process for fabricating the metal-to-metal antifuse of the present invention includes the steps of forming a first metal layer on a semiconductor or other microcircuit structure; forming a first barrier layer over the first metal layer; forming a thick insulating layer over the barrier layer; forming an antifuse aperture in the thick insulating layer; forming a first heavily doped amorphous silicon layer in the aperture over the first barrier layer; forming a dielectric antifuse material layer over the first amorphous silicon layer; forming a second heavily doped amorphous silicon layer over the first dielectric antifuse material layer; forming a second barrier layer over the second amorphous silicon layer; and forming a second metal layer over the second barrier layer.

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