Non-volatile memory cell and fabrication method

Details Non-volatile memory cell and fabrication method Non-volatile memory cell and fabrication method

1993-05-24

1996-01-09

Thomas, Tom

Fishing, trapping, and vermin destroying

437 26, 437 44, 437 52, H01L 218247

Patent

active

054828805

ABSTRACT:
In one embodiment, a non-volatile memory cell structure 10 comprises heavily doped source 11 and drain 12 regions formed in the surface of a semiconductor substrate 8 and separated by a channel region 21. A floating gate 13 is formed over and insulated from the channel region 21 and a control gate 14 is formed over and insulated from the floating gate 13. A lightly doped region 20 is formed in the channel 21 beneath the floating gate 13 and adjoining the source region 11. The lightly doped region 20 is spaced from the surface of said substrate 8. Other embodiments and processes are also disclosed.

REFERENCES:
patent: 4288256 (1981-09-01), Ning et al.
patent: 4804637 (1989-02-01), Smayling et al.
patent: 5019527 (1991-02-01), Ohshima et al.
patent: 5098855 (1992-03-01), Komori et al.

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