Method for cooling a plasma electrode system for an etching appa

Details Method for cooling a plasma electrode system for an etching appa Method for cooling a plasma electrode system for an etching appa

1990-07-17

1992-10-13

Paschall, Mark H.

Electric heating

Metal heating

By arc

2191214, 21912144, 21912158, 156345, B23K 900

Patent

active

051553317

ABSTRACT:
An etching method comprises the steps of setting a substrate to be processed above the surface of a first electrode opposed to a second electrode within a vacuum container, with a clearance formed between the surface of the first electrode and the substrate, supplying a cooling gas to the electrodes with a predetermined flow rate and a pressure, supplying a process gas into the vacuum container, changing the process gas to a plasma, by applying a predetermined electric power across the electrodes, and etching the substrate by means of the plasma of the process gas.

REFERENCES:
patent: 4361749 (1982-11-01), Lord
patent: 4367114 (1983-01-01), Steinberg et al.
patent: 4816638 (1989-02-01), Ukai et al.

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