Method for forming a mesa-isolated SOI transistor having a split

Details Method for forming a mesa-isolated SOI transistor having a split Method for forming a mesa-isolated SOI transistor having a split

1994-04-15

1996-01-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 29, 437 44, 437 41, 257 66, 257347, H01L 21265

Patent

active

054828716

ABSTRACT:
A method for forming a mesa-isolated SOI transistor using a split-process polysilicon gate including the steps of depositing a layer of buried oxide (14) on a silicon substrate (12), depositing an SOI layer (16) on buried oxide layer (14), and forming a gate oxide layer (18) on the SOI layer (16). Further steps are to form a gate polysilicon mesa (20) on the gate oxide layer, and an SOI mesa (28) on gate polysilicon mesa (20) and forming an oxide sidewall (26) on the gate polysilicon mesa (20) and SOI mesa (28). A gate electrode (38) is the formed along with an oxide sidewall (36). Implanting gate electrode (38) with a boron implant occurs next, after which an oxide sidewall is formed on the gate electrode (38). The gate electrode (38) is implanted with phosphorus to form source and drain region. Thereafter annealing the structure takes place.

REFERENCES:
patent: 4597160 (1986-07-01), Ipri
patent: 4763183 (1988-08-01), Ng et al.
patent: 5064775 (1991-11-01), Chang
patent: 5100810 (1992-03-01), Yoshimi et al.
patent: 5111260 (1992-05-01), Malhi et al.
patent: 5185280 (1993-02-01), Houston et al.
patent: 5188973 (1993-02-01), Omura et al.
patent: 5210438 (1993-05-01), Nakamura
patent: 5225356 (1993-07-01), Omura et al.
patent: 5275872 (1994-01-01), Chang
patent: 5292670 (1994-03-01), Sundaresan
patent: 5292675 (1994-03-01), Codama
patent: 5294811 (1994-03-01), Aoyama
patent: 5334281 (1994-08-01), Doerre et al.

Affiliated with

Also associated with

Rating

Method for forming a mesa-isolated SOI transistor having a split does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a mesa-isolated SOI transistor having a split, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a mesa-isolated SOI transistor having a split will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1302648