Charge transfer device producing a noise-free output

Details Charge transfer device producing a noise-free output Charge transfer device producing a noise-free output

1991-11-21

1993-03-02

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

377 60, 257239, H01L 2978, G11C 1928

Patent

active

051913984

ABSTRACT:
A charge transfer device has an output structure formed, in a semiconductor substrate of a first conductivity type, of a base region of a second conductivity type, an output region of the first conductivity type formed in the base region, a reset-drain region of a second conductivity type formed separately from the base region and held at a constant potential, and a reset gate electrode formed on the semiconductor substrate between the base and reset-drain regions via an insulator film to receive a reset pulse. The base region has a portion under the output region which is designed to allow a complete depletion throughout its thickness.

REFERENCES:
patent: 3770988 (1973-11-01), Engeler et al.
patent: 3918070 (1975-11-01), Shannon
patent: 4032952 (1977-06-01), Ohba et al.
patent: 4698656 (1987-10-01), Kamata
IEEE Journal of Solid-State Circuits, vol. SC-9 (Feb. 1971), pp. 1-12.

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