Process for making a deep power diode by thermal migration of do

Details Process for making a deep power diode by thermal migration of do Process for making a deep power diode by thermal migration of do

1974-10-30

1976-05-11

Ozaki, G.

Metal treatment

Compositions

Heat treating

148171, 148172, 148186, 148175, 252 623GA, 252 623E, 252 623ZT, H01L 736

Patent

active

039560236

ABSTRACT:
A semiconductor diode comprises a first body of semiconductor material having a selected resistivity and a first type conductivity and a region of second type conductivity and a selected resistivity. The second body consists of recrystallized semiconductor material of a layer thereof having solid solubility of a dopant therein and has the same crystallographic structure as the first body. The second region is formed by a temperature gradient zone melting process embodying the migration of a metal-enriched melt of semiconductor material through the second body of semiconductor material. Preferably, the metal-enriched melt is no greater than approximately 20 microns in thickness. The second body initially has a < 111 > axial crystallographic orientation when it is a wafer. However, the second body initially may be polycrystalline semiconductor material.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3484302 (1969-12-01), Maeda et al.

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