Fishing – trapping – and vermin destroying
Patent
1991-10-09
1992-10-13
Quach, T. N.
Fishing, trapping, and vermin destroying
437192, 20429812, 148DIG158, H01L 21283
Patent
active
051550636
ABSTRACT:
The present invention relates to a method of fabricating a semiconductor device, which comprises a formation of contact holes in an interlayer insulating film formed on a silicon substrate, formation of a titanium film and a titanium nitride film, as a barrier metal, and lamp annealing. The formation of the titanium nitride film is featured by reactive sputtering using a titanium target whose orientation ratio of (001) plane is not more than 70%. The titanium nitride film thus formed does not shrink rapidly during heat treatment and thus degradation of barrier performance thereof is prevented.
REFERENCES:
patent: 4619695 (1986-10-01), Oikawa et al.
patent: 4731116 (1988-03-01), Kny
patent: 4829024 (1989-05-01), Klein et al.
patent: 4882293 (1989-11-01), Naumann et al.
patent: 4897709 (1990-01-01), Yokoyama et al.
patent: 4911809 (1990-03-01), Wort et al.
patent: 4960732 (1990-10-01), Dixit et al.
Maeda et al, "TiN/Ti barrier metal . . . induced damage analysis", Proceedings 3rd Int'l. IEEE VLSI Multilevel Interconnection Conf., Jun. 9, 1988, Santa Clara, Calif., pp. 411-417.
Joswig, et al., "Improved Performance of TiN-diffusion barriers after a post treatment", Jun. 12-13, 1990 VMIC Conference, p. 477.
NEC Corporation
Quach T. N.
LandOfFree
Method of fabricating semiconductor device including an Al/TiN/T does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating semiconductor device including an Al/TiN/T, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device including an Al/TiN/T will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1300184