Fishing – trapping – and vermin destroying
Patent
1990-12-20
1992-10-13
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437173, 148DIG148, H01L 2120
Patent
active
051550628
ABSTRACT:
A method and apparatus for substantially preventing undesired residual dopants or other impurities from becoming incorporated in growing epitaxial layers of silicon carbide during CVD by avoiding the use of a susceptor for CVD epitaxial growth is disclosed. During the CVD process, the substrate is suspended substantially out of physical contact with any other solid object while a suitable surface of the semiconductor substrate is contacted with source gases that will form epitaxial layers of silicon carbide thereon. Heating during the CVD process is performed, according to the present invention, by inductively heating the substrate using an induction frequency to which the substrate material is sufficiently responsive to heat the substrate to the temperatures required for CVD of silicon carbide.
REFERENCES:
patent: 3627590 (1971-12-01), Mammel
patent: 3996891 (1976-12-01), Isawa et al.
patent: 4029045 (1977-06-01), Cielaszyk et al.
patent: 4593168 (1986-06-01), Amada
patent: 4860687 (1989-08-01), Frijlink
Neumann et al; Hydrodynamic Description of Vapor Levitation Epitaxy; Jrnl. of Crystal Growth 92(1988) pp. 397-406.
Keramidas; Vapor Levitation Epitaxy--A New Concept in Crystal Growth; Jrnl. of Metals; Jan.; p.58.
Cox et al; Vapor levitation epitaxial growth of INGaAsP alloys using trichloride sources; Inst. Phys. Conf. Ser. No. 70; Chapter 13.
Cohen; Afternoon THP; May 23, 1985; THP1 Fabrication and transmission characteristics of low-loss mid-infrared optical fibers.
Cox, et al.; Vapor Levitation Epitaxy; System Design and Performance; Jrnl. of Crystal Growth 79(186) pp. 900-908.
Schweitzer et al.; Magnetische Lagerung einer Epitaxie-Zentrifuge bei Hochvakuumbedingungen; Vakuum-Technik-32 Jahrgang-Heft 3.
Cree Research Inc.
Dang Trung
Hearn Brian E.
LandOfFree
Method for silicon carbide chemical vapor deposition using levit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for silicon carbide chemical vapor deposition using levit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for silicon carbide chemical vapor deposition using levit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1300164