Method of manufacturing dynamic RAM

Details Method of manufacturing dynamic RAM Method of manufacturing dynamic RAM

1991-03-18

1992-10-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 65, H01L 2176, H01L 2180, H01L 2198

Patent

active

051550598

ABSTRACT:
A semiconductor memory device includes a plurality of semiconductor pillar projections separated by grooves formed in longitudinal and transverse directions in a substrate and arranged in a matrix manner, a MOS capacitor and a MOSFET formed on side surfaces at lower and upper portions, respectively, of each pillar projection, a diffusion layer of a source or drain of each MOSFET formed in an upper end face of the pillar projection, and a bit line connected to the diffusion layer. The bit line is in contact with the upper end face of the pillar projection in a self-alignment manner.

REFERENCES:
patent: 4737829 (1988-04-01), Morimoto et al.
patent: 4977436 (1990-12-01), Tsuchiya et al.
patent: 5001526 (1981-03-01), Goton

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