Method of making semiconductor memory device

Details Method of making semiconductor memory device Method of making semiconductor memory device

1992-03-23

1992-10-13

Thomas, Tom

Fishing, trapping, and vermin destroying

437 48, 437 56, 437 83, 437915, H01L 2170

Patent

active

051550580

ABSTRACT:
A semiconductor memory device has plural first transistors constituting an information memory circuit and plural second transistors constituting gate units for controlling information input and output. The plural first transistors and the plural second transistors are formed in mutually overlaying structure across an insulating layer. A heterogeneous material of a nucleation density sufficiently higher than that of the insulating layer and of a size small enough to grow a single nucleus of a semiconductor material is formed on the insulating layer. The transistors positioned on the insulating layer are formed in a monocrystalline or substantially monocrystalline semiconductor layer grown around the single nucleus formed on the different material.

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