Lateral transistor free of parisitics

Details Lateral transistor free of parisitics Lateral transistor free of parisitics

1979-08-10

1981-12-01

Larkins, William D.

357 35, 357 86, H01L 2704, H01L 2972

Patent

active

043039324

ABSTRACT:
For the sake of an increased operational security and a reduction of substrate currents of an intergrated semiconductor circuit with a lateral transistor and a pn insulation, a protective zone exhibiting the opposite conductivity type and contacted barrier-free together with the collector of the collector electrode is inventively provided in the collector of the lateral transistor.

REFERENCES:
patent: 3590345 (1971-06-01), Brewer
patent: 3676714 (1972-07-01), Wensink et al.
patent: 3878551 (1975-04-01), Callahan Jr.
patent: 4070654 (1978-01-01), Tachi
patent: 4117507 (1978-09-01), Pacor
patent: 4156246 (1979-05-01), Pedersen
Lehning, IEEE J. of Solid State Circuits, vol. SC 9 No. 5 Oct. 1974, pp. 228-229.
Hamilton and Howard, Basic Integrated Circuit Engineering, (McGraw-Hill, NY 1975) p. 7.
Warner Jr. et al., "Bipolar Lock-layer Transistor," Solid-State Electronics, (Pergammon Press, London) vol. 18, 1975, p. 323.

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