Semiconductor device for generating an electron beam and method

Details Semiconductor device for generating an electron beam and method Semiconductor device for generating an electron beam and method

1979-10-12

1981-12-01

Edlow, Martin H.

357 52, 357 55, H01L 2990

Patent

active

043039308

ABSTRACT:
The invention relates to a semiconductor, cathode and a camera tube and a display tube, respectively, having such a cathode, based on avalanche breakdown in a p-n junction extending parallel to the surface of the semiconductor body. The released electrons obtain extra energy by means of an accelerating electrode provided on the device. The resulting efficiency increase makes the manufacture of such cathodes in planar silicon technology practical. Since the depletion zone of the p-n junction upon avalanche breakdown does not extend to the surface, the released electrons show a sharp, narrow energy distribution. This makes such cathodes particularly suitable for camera tubes. In addition they find application, for example, in display tubes and flat displays.

REFERENCES:
patent: 3735210 (1973-05-01), Kolish
patent: 3909119 (1975-09-01), Worley
patent: 4079402 (1978-03-01), Dunkly
patent: 4099998 (1978-07-01), Ferro
patent: 4259678 (1981-03-01), Van Gorkom
"Hot Electron Emission From Shallow p-n Junctions in Silicon", Bartelink et al., Physical Review, vol. 130, No. 3, pp. 972-985, May 1, 1963.

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