Metal conductor structure having low electro-migration at high c

Details Metal conductor structure having low electro-migration at high c Metal conductor structure having low electro-migration at high c

1989-06-30

1990-11-06

Tarcza, Thomas H.

H01L 2348

Patent

active

H00008427

ABSTRACT:
A technique for providing high current carrying metal conductors for coupling to transistors or the like to increase the current carrying capacity of the transistor without substantial increase in size. The conductors are tapered along the axis of current flow with current being conducted to or from the tapered portion of the conductors, such that the current density therein is substantially constant.

REFERENCES:
patent: 4371890 (1983-02-01), Anagnostopoulos et al.
patent: 4583111 (1986-04-01), Early
patent: 4590327 (1986-05-01), Nath et al.
patent: 4818335 (1989-04-01), Karnett
Braen, IBM Bulletin-Power Distr. for LSID, Dec. 1973 vol. 16 No. 7 p. 2308.
Layout Plot Of An Exemplary High-Current Capacity MOS Transistor Of The Prior Art From A Proprietary CMOS IC.

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