Avalanche fuse element in programmable memory

Details Avalanche fuse element in programmable memory Avalanche fuse element in programmable memory

1982-03-23

1985-03-26

Richardson, Robert L.

Static information storage and retrieval

Read only systems

Semiconductive

365 96, G11C 1700

Patent

active

045077576

ABSTRACT:
A programmable device is provided by a thin-oxide avalanche fuse element which is programmed at a voltage below the oxide breakdown level. This device may be used in a memory array of the PROM type. Upon breakdown, the thin oxide is perforated by small holes which fill with silicon to create short circuit.

REFERENCES:
patent: 3576549 (1971-04-01), Hess et al.
patent: 3668655 (1972-06-01), Allen
patent: 4122547 (1978-10-01), Schroeder et al.

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