Solid state imaging device

Details Solid state imaging device Solid state imaging device

1984-09-06

1986-10-21

Davie, James W.

357 24, H01L 2714, H01L 3100

Patent

active

046188746

ABSTRACT:
There is disclosed a solid state imaging device comprising P.sup.+ regions formed in photo-electro converting element regions and the separating region defined therebetween, respectively, the P.sup.+ regions being continuous to each other and defining no step portion therebetween. There is also disclosed a method of manufacturing the imaging device, the method comprising a step of forming P.sup.+ regions in photo-electro converting element regions and the separating region defined therebetween, respectively.

REFERENCES:
patent: 4011105 (1977-03-01), Paivinen et al.
patent: 4389661 (1983-06-01), Yamada
patent: 4498013 (1985-02-01), Kuroda et al.
Hynecek, "Virtual Phase Technology: A New Approach to Fabrication of Large-Area CCD's," IEEE Transactions on Electron Devices, vol. ED-28, No. 5, May 1981.
Teranishi et al., "No Image Lag Photodiode Structure in the Interline CCD Image Sensor", IEDM 82, pp. 324-327.

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