Fluorine enhanced plasma growth of native layers on silicon

Details Fluorine enhanced plasma growth of native layers on silicon Fluorine enhanced plasma growth of native layers on silicon

1979-10-03

1981-11-17

Edmundson, F.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

423335, 427 38, 427 82, H01L 21316, C01B 3312, B05D 306

Patent

active

043009891

ABSTRACT:
The plasma growth rate of native layers, such as oxide and nitride, on silicon is enhanced by the addition of fluorine. An increase in growth rate is obtained, and the oxide growth rates on doped and undoped portions of the silicon substrate are substantially the same. The fluorine is typically added by means of a fluorinated compound, typically CF.sub.4, comprising 0.01 to 5 molecular percent of the plasma. Lower substrate temperatures, typically less than 600 degrees C., may be used, resulting in less warpage of the wafer and less diffusion of dopants.

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