Method for production of semiconductor devices

Metal working – Method of mechanical manufacture – Assembling or joining

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29578, 29576W, 148 15, 148175, 148187, 156643, 156648, 156662, 357 49, H01L 2176, H01L 21302, H01L 2120

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045064342

ABSTRACT:
A method for producing semiconductor devices having a substrate, element fabrication areas formed in the substrate and isolation areas surrounding the element fabrication areas. The method comprises forming a thermal strain absorbing layer on the top surface of the element fabrication areas, forming at least one groove in an area which is to become the isolation areas, inlaying an insulator in the at least one groove, and annealing the insulator to make the density thereof uniform.

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IBM Technical Disclosure Bulletin, Abbas et al., "Simplified Isolation for an Integrated Circuit", vol. 25, No. 12, May 1983, pp. 6611-6614.

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