Method of making a narrow-band inverted homo-heterojunction aval

Details Method of making a narrow-band inverted homo-heterojunction aval Method of making a narrow-band inverted homo-heterojunction aval

1978-06-28

1979-07-24

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

204 38B, 204192D, 427 74, 427 85, 427 87, 29572, H01L 3118

Patent

active

041622030

ABSTRACT:
A narrow-band, inverted homo-heterojunction avalanche photodiode, configured in the shape of a mesa situated upon a substrate which is transparent to selected light energy wavelengths. The diode is inverted for operation such that the incoming light energy enters the substrate side, passes through a wavelength selective buffer layer and is absorbed upon entering the succeeding, active region. Avalanche gain is attained by drift from the area of absorption to the high field p-n homo-heterojunction located immediately thereafter. The device exhibits low levels of noise during operation because absorption is occurring in a low field region and because the ionization and breakdown noise associated with lattice mismatches is avoided through the formation of the p-n homo-heterojunction in one continuous growth process. Appropriate passivation of the mesa walls inhibits surface leakage and breakdown effects.

REFERENCES:
patent: 3832246 (1974-08-01), Lynch
patent: 3894895 (1975-07-01), Khandelwal
patent: 4036645 (1977-07-01), Pinder
Silicon Nitride Films by Direct RF Sputter Deposition, G. J. Kominiak, J. Electrochem. Soc., Sep. 1975, pp. 1272-1273.

Affiliated with

Also associated with

Rating

Method of making a narrow-band inverted homo-heterojunction aval does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a narrow-band inverted homo-heterojunction aval, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a narrow-band inverted homo-heterojunction aval will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1287097