Semiconductor device

Details Semiconductor device Semiconductor device

1986-06-03

1988-02-09

Sikes, William L.

357 80, 357 71, H01L 2342, H01L 2344, H01L 2346

Patent

active

047244755

ABSTRACT:
A semiconductor device has the following components: a semiconductor substrate; a first region of a first conductivity type which is formed in the surface of the semiconductor substrate; a second region of a second conductivity type which is formed adjacent to the first region, in the surface of the semiconductor substrate; a first electrode which is formed on the first region; and a second electrode which is formed on the second region, the first electrode being so arranged as to be connected outside of the device, in accordance with a pressure contact. The first electrode comprises: a lower layer which is formed on the first region and consists of a metal capable of coming into ohmic contact with the semiconductor substrate; an intermediate layer of a hard conductive material, which layer is formed on the lower layer and is thicker than the lower layer; and an upper layer of a soft material, which layer is formed on the intermediate layer and is thinner than the intermediate layer.

REFERENCES:
patent: 4155155 (1979-05-01), Bourdon et al.
patent: 4176443 (1979-12-01), Iannuzzi et al.
patent: 4321612 (1982-03-01), Murata et al.

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