Semiconductor devices having a double-layer interconnection stru

Details Semiconductor devices having a double-layer interconnection stru Semiconductor devices having a double-layer interconnection stru

1991-03-27

1993-03-30

Gonzalez, Frank

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257633, 257641, H01L 2348

Patent

active

051988844

ABSTRACT:
A semiconductor device having a double-layer interconnection with contact portions between first and second metal films covered with at least a silicon nitride film is provided wherein an electromigration characteristic at the contact portions is improved. The improvement is achieved by defining a value obtained by multiplying a thickness of the silicon nitride film by a stress of the nitride film formed at the contact portions is not larger than 2/5 of a value obtained by multiplying a thickness of the silicon nitride film by a stress of the nitride film formed at non-contact portions. By this, the stress exerted on the second metal film is reduced to improve the electromigration life at the contact portions by about one order of magnitude. The first and second metal films are made of Al or Al-based alloys.

REFERENCES:
patent: 5060050 (1991-10-01), Tsuneoka et al.
"Effect of Stress in Passivation Layer on Electromigration Lifetime for Vias" by H. Nishimura et al.; VLSI Technology, 1990.
Solid State Technology, vol. 3, pp. 113-120, (1983) by P. B. Ghate.
"Reliability Implications of Nitrogen Contamination During Deposition of Sputtered Aluminum/Silicon Metal Films", by J. Klema e al.; The 22nd Annual Proceeding International Reliability Physics Symposium, pp. 1-5 (1984).
"A New Reliability Problem Associated with Ar Ion Sputter Cleaning of Inerconnect Vias", by H. Tomioka et al.; The 17th Annual Proceeding International Reliability Physics Symposium, pp. 53-58 (1989).

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