Single-electrode charge-coupled random access memory cell with i

Details Single-electrode charge-coupled random access memory cell with i Single-electrode charge-coupled random access memory cell with i

1973-09-24

1977-04-12

Wojciechowicz, Edward J.

357 23, H01L 2978

Patent

active

040178838

ABSTRACT:
A charge-coupled random access memory cell is formed in a semiconductor body divided into three adjacent regions. The first region has an impurity diffused therein and serves alternately as a source and a drain for charge carriers. The second or gate region has a threshold voltage determined by an impurity imparted thereto by either diffusion or ion implantation. The third or storage region has a lower threshold voltage than the gate region. A single unitary metal electrode extends in superimposed relation to the second and third regions. Upon the application of potentials to the first region and the electrode, charge carriers may be stored in or removed from the third region so as to write a "1" or a "0" in the cell.

REFERENCES:
patent: 3305708 (1967-02-01), Ditrick
patent: 3374407 (1968-03-01), Olmstead
patent: 3533089 (1970-10-01), Wahlstrom
patent: 3651349 (1972-03-01), Kahng et al.
patent: 3654499 (1972-04-01), Smith

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