Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1986-01-30
1988-02-09
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250396R, 250398, H01J 3700
Patent
active
047243287
ABSTRACT:
Lithographic apparatus for producing microstructures which comprises a particle beam source 1 and a condenser lens system 2, 3 and a controllable aperture diaphragm 4 having line-shaped multi-hole structures 17 . . . 22 for generating a plurality of particle beam fingers. A blanking diaphragm and an imaging optic structure 6, 7 OL are also provided. The invention produces a higher output of exposed structures than the prior art and for this purpose the particle beams are combined to form a ribbon beam which has the greatest cross-sectional dimension 12, 13 approximately in the longitudinal direction 23 of the line-shaped multi-hole structure 17 . . . 22 and which has the smallest cross-sectional dimension which does not significantly exceed the width of the multi-hole structure. The multiple beams are utilized in lithographic apparatus for generating semiconductor circuits in the submicrometer region on a GaAs base and for generating components for optical communications technology.
REFERENCES:
patent: 4130761 (1978-12-01), Matsuda
patent: 4153843 (1979-05-01), Pease
patent: 4200794 (1980-04-01), Newberry
patent: 4409487 (1983-10-01), Kuschel et al.
patent: 4430570 (1984-02-01), Takigawa
patent: 4472636 (1984-09-01), Hahn
patent: 4498952 (1985-02-01), Christensen
patent: 4633090 (1986-12-01), Hahn
IEEE Transactions on Electron Devices, vol. ED-26, No. 4, Apr. 1979, Recent Advances in Electron-Beam Lithography for the High Volume Production VLSI Devices, pp. 663-674.
Design and Testing of a Corrected Projection Lens System for Electron-Beam Lithography appearing in Siemens Forsch.-U. Entwickl.-Ber.Bd. 9 (1980) No. 3.
Anderson Bruce C.
Siemens Aktiengesellschaft
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