Semiconductor device having contact resistance reducing layer

Details Semiconductor device having contact resistance reducing layer Semiconductor device having contact resistance reducing layer

1997-07-07

1998-09-08

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 96, 257 97, 257 98, 257 99, 372 45, 372 46, 372 49, 372 99, H01L 2906, H01L 310328, H01L 310336

Patent

active

058048340

ABSTRACT:
In a wide band cap semiconductor, a GaP.sub.x N.sub.1-x (0.1.ltoreq.x.ltoreq.0.9) layer is inserted between a layer comprising AlGaInN and an electrode, The potential barrier between the electrode and the surface layer can be reduced. Contact resistance can be decreased, and ohmic contact can be easily taken up.

REFERENCES:
patent: 5005057 (1991-04-01), Izumiya et al.
patent: 5173751 (1992-12-01), Ota et al.
patent: 5258990 (1993-11-01), Olbright et al.
patent: 5363390 (1994-11-01), Yang et al.
patent: 5428634 (1995-06-01), Bryan et al.
patent: 5434426 (1995-07-01), Furuyama et al.
patent: 5523589 (1996-06-01), Edmund et al.

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