Process for fabricating heterojunction bipolar transistor with l

Details Process for fabricating heterojunction bipolar transistor with l Process for fabricating heterojunction bipolar transistor with l

1985-09-30

1986-10-21

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29577C, 29590, 148 15, 148175, 148DIG10, 148DIG84, 357 61, 357 91, H01L 21265

Patent

active

046177248

ABSTRACT:
When the collector, base and emitter layers of a heterojunction bipolar transistor or a tunneling hot electron transistor are vertically stacked, the thickness of the base layer is preferably small so as to increase the current gain or switching speed. A thin base layer, however, has a disadvantage in that a space of the base layer between the actual base region and the base electrode makes the base resistance too large, decreasing current gain or switching speed, or is fully depleted due to interface states, making the transistor inoperable. This disadvantage is eliminated by forming a base contact region by doping in a region in alignment with the edge of an electrode so as to remove said space, that is, the base contact region is in contact with the actual base region.

REFERENCES:
Electronic Letters, vol. 19, No. 10, May 1983, London, GB; D. L. Miller et al. "(GaAl)As/GaAs Heterojunction bipolar transistors with graded composition base", pp. 367, 368.
Electronics Letters, vol. 16, No. 1, Jan. 1980, Hitchin, GB; D. Ankri et al. "Design and evaluation of a planar GaAlAs-GaAs bipolar transistor", pp. 41, 42.
Japanese Journal of Applied Physics. Supplements, vol. 22, Supplement No. 22-1, 1983, Tokyo, JP; J. S. Harris et al. "Heterojunction bipolar transistors", pp. 375-380 * pp. 376-377, FIGS. 1, 2, 3B*.
Journal of Applied Physics, vol. 46, No. 5, May 1975, New York, USA; M. Konagai et al. "(GaAl)As-GaAs heterojunction transistors with high injection efficiency", pp. 2120-2124.
Proceedings of the IEEE, vol. 70, No. 1, Jan. 1982, New York, USA; H. Kroemer "Heterostructure bipolar transistors and integrated circuits", pp. 13-25.
Hayes et al. Electronics Letts. 19 (1983) 410.
Nakamura et al. IEEE-Trans. Electron Devices, 29 (1982) p. 591.

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