Semiconductor device having controlled surface charges by passiv

Details Semiconductor device having controlled surface charges by passiv Semiconductor device having controlled surface charges by passiv

1973-11-30

1976-06-29

Larkins, William D.

357 23, 357 48, 357 52, 357 71, H01L 2704, H01L 2978, H01L 2994

Patent

active

039673103

ABSTRACT:
After desired impurities are diffused into a semiconductor substrate through a masking layer of SiO.sub.2 formed thereupon so as to form a semiconductor device, the masking layer is completely removed therefrom and thereafter more than two thin layers of different insulating materials are deposited upon the cleaned surface of the semiconductor device thus providing a method of forming a semiconductor device with an improved passivation film thereon. Said insulating materials are selected from the group consisting of silicon dioxide, a silicon nitride, alumina, boro-silicate glass, phospho-silicate glass, alumino-silicate glass, alumino-phospho-silicate glass and alumino-boro-silicate glass, and the thickness of each thin layer is in the range of 300 to 1500 angstroms and the first layer is silicon dioxide.

REFERENCES:
patent: 3386163 (1968-06-01), Brennemann et al.
patent: 3428875 (1969-02-01), Snow
patent: 3457125 (1969-07-01), Kerr
patent: 3571914 (1971-03-01), Lands et al.
patent: 3590272 (1971-06-01), Keshavan
patent: 3635774 (1972-01-01), Ohta
patent: 3697334 (1972-10-01), Yamamoto
Snow et al., "Space-Charge Polarization in Glass Films," Journal of Applied Physics, vol. 37, No. 5, Apr. 1966, pp. 2123-2131.
Yamin, "Observations on Phosphorus Stabilized SiO.sub.2 Films," IEEE Trans. on Electron Dev., vol. ED13, No. 12, Feb. 1966, pp. 256-258.

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