Input transient protection for integrated circuit element

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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357 23, 357 41, 357 42, 307202R, 307304, H01L 2702, H01L 2978, H02H 720, H03K 3353

Patent

active

039672956

ABSTRACT:
In an integrated circuit which includes an element which is subject to destructive breakdown upon the application thereto of a high voltage, means including a semiconductor current limiting resistor bounded by a PN junction is formed in the device and coupled between a conductor and the circuit element. One end of the current limiting resistor is coupled to the conductor and has a configuration such that a distributed resistance is included within the resistor between the conductor and the PN junction boundary of the resistor, to protect the PN junction bounding the resistor.

REFERENCES:
patent: 3590340 (1971-06-01), Kubo et al.
patent: 3615932 (1971-10-01), Makimoto et al.
patent: 3629782 (1971-12-01), Sahni
patent: 3667009 (1972-05-01), Rugg
patent: 3673428 (1972-06-01), Athanas
patent: 3712995 (1973-01-01), Steudel
patent: 3748547 (1973-07-01), Sugimoto
patent: 3754171 (1973-08-01), Anzai et al.
patent: 3934159 (1976-01-01), Nomiya et al.
RCA Cos/Mos Integrated Circuits Manual, (3/1971), p. 55, RCA Solid State Division, Somerville, N.J.
R. S. Samson, "Obtaining High Resistance in Integrated Circuits", IBM Technical Disclosure Bulletin, vol. 13, (1/1971), p. 2151.

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