Semiconductor device with multi-layered metal interconnections

Details Semiconductor device with multi-layered metal interconnections Semiconductor device with multi-layered metal interconnections

1969-12-29

1976-03-02

Larkins, William D.

357 54, 357 67, 357 68, 357 69, H01L 2952, H01L 2954

Patent

active

039421872

ABSTRACT:
Improved metal interconnections for a semiconductor device is described. The interconnections comprise a first metal layer, eg. aluminum, connected to the semiconductor, a second metal layer, eg. gold, for external connection, and a third metal layer interconnecting the first and second metal layers such that the junction areas of interconnection are laterally spaced from one another.

REFERENCES:
patent: 3335338 (1967-08-01), Lepselter
patent: 3429029 (1969-02-01), Lanjdon et al.
patent: 3430104 (1969-02-01), Burgess et al.
patent: 3436616 (1969-04-01), Jarrad
patent: 3480412 (1969-11-01), Duffek, Jr. et al.
patent: 3495324 (1970-02-01), Guthrie et al.
patent: 3501681 (1970-03-01), Weir
patent: 3518506 (1970-06-01), Gates
patent: 3569796 (1971-03-01), Mulford, Jr.

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