Method of fabricating bonded wafer

Details Method of fabricating bonded wafer Method of fabricating bonded wafer

1996-08-09

1998-09-08

Dang, Trung

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

438406, 148DIG12, H01L 2130

Patent

active

058044949

ABSTRACT:
A method of fabricating a bonded wafer which is capable of reducing the concentrations of impurities, and more particularly the boron concentration, at the interface of bonding in the bonded wafer, wherein first and second wafers to be bonded are finish-cleaned, then the wafers are temporarily stored in a closed box so as to isolate the wafers from clean-room air, thereafter the first and second wafers are superposed in a clean atmosphere which is held out of direct contact with clean-room air, and finally the superposed first and second wafers are bonded together by a heat-treatment.

REFERENCES:
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patent: 5129827 (1992-07-01), Hoshi et al.
patent: 5196375 (1993-03-01), Hoshi
patent: 5266135 (1993-11-01), Short et al.
Mitani et al.; "Causes and Prevention of Temperature --Dependent Bubbles in Silicon Wafer Bonding", Japanese Journal of Applied Physics, vol. 30, No. 4, pp. 615-622; Apr. 1991.
Parks et al.; "Characterization of Electronic Devices Employing Silicon Bonding"; First International Symposium on Semi Conductor Wafer Bonding Science, Technology and Applications; 1991, pp. 321-330.
Stevie et al.; "Boron Contamination of Surfaces in Silicon Microelectronics processing: characterization and causes"; J. Vac. Sci. Technol. A 9(5) Sep./Oct. 1991; pp. 2813-2816.

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