Detector and mixer diode operative at zero bias voltage

Details Detector and mixer diode operative at zero bias voltage Detector and mixer diode operative at zero bias voltage

1987-08-10

1989-06-13

James, Andrew J.

357 58, 357 4, 357 13, H01L 2714

Patent

active

048397091

ABSTRACT:
This invention is directed to an NPIN (or PNIP) diode structure and epitaxial process for fabricating same wherein the thickness and doping levels of the intermediate layers of the structure and such that these layers are substantially depleted of majority carriers and therefore enable the structure to be operated at zero volts DC bias. This structure may be utilized either as an efficient detector diode or a mixer diode substantially free of odd order harmonic mixing products, and both devices may be fabricated in a single molecular beam epitaxial process with the advantage of high control over epitaxial layer thickness and impurity concentration.

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Palmateer et al., "The Use of Substrate Annealing as a Gettering Technique Prior to Molecular Beam Epitaxial Growth", J. Vac. Sci. Technol. B2(2), Apr.-Jun. 1984, pp. 188-193.
Palmateer et al., "A Study of Substrate Effects on Planar Doped Structures in Gallium Aresenide Grown by Molecular Beam Epitaxy", Inst. Phys. Conf. Ser. No. 65, Chap. 3, (1983), Paper Presented at Int. Symp. GaAs and Related Compounds, Albuquerque, N.M., 1982.

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