Method of highly compact EPROM and flash EEPROM devices

Fishing – trapping – and vermin destroying

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437 44, 437 48, H01L 21265

Patent

active

051983800

ABSTRACT:
Structures, methods of manufacturing and methods of use of electrically programmable read only memories (EPROM) and flash electrically erasable and programmable read only memories (EEPROM) include split channel and other cell configurations. An arrangement of elements and cooperative processes of manufacture provide self-alignment of the elements. An intelligent programming technique allows each memory cell to store more than the usual one bit of information. An intelligent erase algorithm prolongs the useful life of the memory cells. Use of these various features provides memory having a very high storage density and a long life, making it particularly useful as a solid state memory in place of magnetic disk storage devices in computer systems.

REFERENCES:
patent: 4173818 (1979-11-01), Bassous et al.
patent: 4409723 (1983-10-01), Harari
patent: 4486769 (1984-12-01), Simko
patent: 4503519 (1985-03-01), Arakawa
patent: 4557215 (1986-03-01), Stewart et al.
patent: 4795719 (1989-01-01), Eitan
patent: 4804637 (1989-02-01), Smayling et al.
patent: 4814286 (1989-03-01), Tam
patent: 4852062 (1989-07-01), Baker et al.
patent: 4853895 (1989-08-01), Mitchell et al.
patent: 4935378 (1990-06-01), Mori

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