Method of making a MOS thin film transistor with self-aligned as

Details Method of making a MOS thin film transistor with self-aligned as Method of making a MOS thin film transistor with self-aligned as

1992-06-17

1993-03-30

Quach, T. N.

Fishing, trapping, and vermin destroying

437 21, 437 44, 437 46, 437984, H01L 21335

Patent

active

051983796

ABSTRACT:
A semiconductor thin film formed over a substrate and having drain and source regions each being of a conductivity type and a channel region of another conductivity type defined between the drain and source regions, a gate electrode(s) formed over and/or below the channel region of the semiconductor thin film through an insulating layer(s), a pair of electrodes being connected to the drain and source regions of the semiconductor thin film, in which said source region is placed in a self-aligned manner and adjoined to said channel region, while a drain-offset region is defined between said channel region and said drain region in a self-aligned manner.

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