Method for forming a bipolar transistor structure

Details Method for forming a bipolar transistor structure Method for forming a bipolar transistor structure

1992-03-23

1993-03-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 89, 437 59, 437162, 148DIG11, H01L 21265

Patent

active

051983753

ABSTRACT:
A vertical bipolar transistor (10) and a lateral bipolar transistor (11) are formed wherein both transistors (10 and 11) have a substrate (12). A dielectric layer (22) is formed overlying the substrate (12), and a conductive layer (24) is formed overlying the dielectric layer (22). Another dielectric layer (26) is formed overlying the conductive layer (24). A device opening is formed through the dielectric layers (22 and 26) and the conductive layer (24). A conductive region (33) is formed within the device opening and overlying the substrate (12). For transistor (10), the conductive region (33) is doped to form an active base electrode region (36) and a first current electrode region (38). A second current electrode region is formed via a diffusion (16). For transistor (11), a base electrode is formed via a diffused base region (46), and first and second current electrodes are respectively formed via diffused regions (44 and 48).

REFERENCES:
patent: 4663831 (1987-05-01), Birrittella et al.
patent: 4696097 (1987-09-01), McLaughlin et al.
patent: 4703554 (1987-11-01), Havemann
patent: 4786615 (1988-11-01), Liaw et al.
patent: 4824799 (1989-04-01), Komatsu
patent: 4849371 (1989-07-01), Hansen et al.
patent: 4851362 (1989-07-01), Suzuki
patent: 4860077 (1989-08-01), Reuss et al.
patent: 4876212 (1989-10-01), Koury
patent: 4902641 (1990-02-01), Koury, Jr.
patent: 4997775 (1991-03-01), Cook et al.

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