Semiconductor memory device with peripheral circuits

Metal working – Method of mechanical manufacture – Assembling or joining

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Details

29578, 29577C, 29591, 148187, H01L 2122

Patent

active

044267649

ABSTRACT:
A semiconductor memory device and a method of manufacturing the device wherein a field insulation is formed in a surface of a semiconductor body except for the source, drain and channel regions, a first floating gate is self-aligned to the channel region, a second gate insulated from the first floating gate covers the first floating gate and the first insulator having a width substantially same as the length of the channel region between the source and the drain regions.

REFERENCES:
patent: 3868187 (1975-02-01), Masuoka
patent: 3899373 (1975-08-01), Antipov
patent: 3984822 (1976-10-01), Simko et al.
patent: 4112507 (1978-09-01), White et al.
patent: 4115914 (1978-09-01), Harari
patent: 4151021 (1979-04-01), McElroy

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