Plasma CVD apparatus

Details Plasma CVD apparatus Plasma CVD apparatus

1986-04-08

1988-02-09

Kittle, John E.

Coating apparatus

Gas or vapor deposition

With treating means

118728, 427 38, C23C 1650

Patent

active

047235080

ABSTRACT:
A plasma CVD apparatus including a reaction chamber; a pair of electrodes disposed in the reaction chamber between which plasma discharge occurs; a substrate support maintained at a reference voltage; a vacuum pump for evacuating the reaction chamber; a first voltage supply for supplying a first alternating voltage to one of the electrodes; and a second voltage supply for supplying a second alternating voltage to the other of the electrodes where the second alternating voltage is out-of-phase with respect to the first alternating voltage.

REFERENCES:
patent: 4287851 (1981-09-01), Dozier
patent: 4328646 (1982-05-01), Kaganowicz
patent: 4582720 (1986-04-01), Yamazaki
patent: 4593644 (1986-06-01), Hanak
Rand, Myron J., "Plasma-Promoted Deposition of Thin Inorganic Films", J. Vac. Sci. Technol., vol. 16, No. 2 (Mar./Apr. 1979) pp. 420-427.

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