MOS bandgap voltage reference circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307491, H03K 326, H03K 301

Patent

active

048395358

ABSTRACT:
A bandgap voltage reference circuit manufactured with a MOS process is provided which is stable over temperature variations as well as variations in threshold voltage that does not require an operational amplifier. The reference is generated by a MOS current source two sourcing current to substrate bipolar transistors operating at different current densities and operated as emitter followers having a pair MOS current mirrors sinking current therefrom. A start-up circuit initializes the circuit upon application of supply voltages. An output stage multiplies the bandgap reference voltage to the desired output voltage level. A feedback stage improves the accuracy of the output voltage by adjusting the current in the reference circuit.

REFERENCES:
patent: 4287439 (1981-09-01), Leuschner
patent: 4380706 (1983-04-01), Wrathall

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