Recessed interdigitated integrated capacitor

Details Recessed interdigitated integrated capacitor Recessed interdigitated integrated capacitor

1981-04-28

1983-10-11

James, Andrew J.

357 14, 357 15, 357 22, 357 55, 357 68, H01L 2702, H01L 2906, H01L 2348, H01L 2944

Patent

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044096089

ABSTRACT:
A large value capacitor having interdigitated electrodes embedded within a planar substrate of semiconductor material and a method for producing the capacitor are presented. Metallic material forming a plurality of individual electrodes is deposited within a plurality of isolated parallel spaced-apart planar recesses formed into the substrate from the planar surface by ion beam machining, etching, or the like. Alternate individual electrodes are electrically interconnected to form the interdigitated opposite electrodes of the capacitor with the dielectric comprising the high resistivity substrate material. Each of the interdigitated electrodes is connectable to other electronic members including members disposed on the same substrate.

REFERENCES:
patent: 3565807 (1971-02-01), Siverisen et al.
patent: 3962713 (1976-06-01), Kendall et al.
patent: 4156249 (1979-05-01), Koo
patent: 4249196 (1981-02-01), Durney et al.
Arzubi et al., IBM Technical Disclosure Bulletin, vol. 17, No. 6, pp. 156570, Nov. 1974.

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