De-ionized water/ozone rinse post-hydrofluoric processing for th

Details De-ionized water/ozone rinse post-hydrofluoric processing for th De-ionized water/ozone rinse post-hydrofluoric processing for th

1996-10-04

1998-09-08

Rotman, Alan L.

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

438743, B08B 300

Patent

active

058039805

ABSTRACT:
One embodiment of the instant invention is a method of preventing the formation of silicic acid on exposed silicon of an electronic device formed on a silicon wafer and having silicon features, the method comprising: removing a portion of oxide (step 302) formed on the silicon wafer thereby exposing at least some portion of the silicon substrate or the silicon features; cleaning the silicon wafer by subjecting the silicon wafer to an ozonated solution (step 304), preferably deionized water; and drying the silicon wafer (step 306). Preferably, a thin oxide is formed on the silicon wafer during the step of subjecting the wafer to the ozonated solution. The thin oxide is, preferably, on the order of approximately 6 to 20 .ANG. thick. After removing said portions of oxide and thereby exposing portions of said silicon wafer and/or silicon feature, the exposed silicon becomes hydrophobic. However, after the exposed silicon is subjected to the ozonated solution, the silicon wafer becomes hydrophilic--thereby preventing the formation of silicic acid on the silicon wafer or the silicon features.

REFERENCES:
patent: 4749640 (1988-06-01), Tremont
patent: 5022961 (1991-06-01), Izumi
patent: 5665168 (1997-09-01), Nakano
Journal of the Electrochemical Society, vol. 142, No. 6, Jun. 1995 Effects of Drying Methods and Wettability of Silicon on the Formation of Water Marks in Semiconductor Processing.
Abstract published at the 188th Meeting of the Electrochemical Society in Chicago on Oct. 8-13, 1995.

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