Fluorinated precursors from which to fabricate amorphous semicon

Details Fluorinated precursors from which to fabricate amorphous semicon Fluorinated precursors from which to fabricate amorphous semicon

1987-03-09

1989-06-13

Morgenstern, Norman

Fishing, trapping, and vermin destroying

427 39, 4272551, 4272552, B05D 036, C23C 1600

Patent

active

048393126

ABSTRACT:
A method producing a solid semiconductor film characterized by a low density of defect states in the energy gap thereof by the glow discharge deposition of a precursor gaseous mixture which includes a gas chosen from the group consisting essentially of hydrogen, fluorine, or combinations thereof and a compound chosen from the group consisting essentially of SiH.sub.3 F, SiH.sub.2 F.sub.2, SiHF.sub.3, SiHCl.sub.3, SiH.sub.2 Cl.sub.2, SiH.sub.3 Cl, SiCl.sub.3 F, SiCl.sub.2 F.sub.2, SiClF.sub.3, or combinations thereof.

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patent: 4637938 (1987-01-01), Lee et al.

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