Method of making a field effect transistor with overlay gate str

Details Method of making a field effect transistor with overlay gate str Method of making a field effect transistor with overlay gate str

1987-12-17

1989-06-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 29, 437 49, 437175, 437176, 437177, 437179, 437245, 437912, 148DIG143, H01L 21265, H01L 2144

Patent

active

048393045

ABSTRACT:
For reduction in parasitic capacitance of a overlay gate structure, there is disclosed a process of fabricating a MES type field effect transistor comprising the steps of (a) preparing a semi-insulating substrate with a surface having a gate forming area and a remaining area, (b) forming a gate electrode on the gate forming area of the surface of the semi-insulating substrate, the gate electrode having an upper surface and side walls, (c) forming a protection film on the upper surface and the side walls of the gate electrode and the remaining area of the surface of the semi-insulating substrate, (d) covering the protection film with a material which is different in etching rate from the protection film, (e) forming a filling layer of the material for creating a generally smooth topography by removing a part of the material over the gate electrode and a part of the protection film on the upper surface of the gate electrode, the filling layer having an upper surface substantially coplanar to the upper surface of the gate electrode, (f) forming a conductive layer on the upper surface of the gate electrode and the upper surface of the filling layer, and (g) removing the filling layer so as to cause the conductive layer to be spaced from a part of the protection film on the remaining area of the surface of the semi-insulating layer, so that the conductive layer does not contact with the filling layer, typically an insulating material.

REFERENCES:
patent: 4518629 (1985-05-01), Jeuch
patent: 4546540 (1985-10-01), Ueyamagi et al.
patent: 4551905 (1985-09-01), Chao et al.
patent: 4599790 (1986-07-01), Kim et al.
patent: 4670090 (1987-06-01), Sheng et al.
patent: 4694564 (1987-09-01), Emoki et al.
patent: 4700462 (1987-10-01), Beaubiem et al.
patent: 4735913 (1988-04-01), Hayes
patent: 4774206 (1988-09-01), Willer

Affiliated with

Also associated with

Rating

Method of making a field effect transistor with overlay gate str does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a field effect transistor with overlay gate str, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a field effect transistor with overlay gate str will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1277483