Photoelectric conversion semiconductor and manufacturing method

Details Photoelectric conversion semiconductor and manufacturing method Photoelectric conversion semiconductor and manufacturing method

1981-02-24

1983-10-11

Barr, Josephine

Compositions

Electrically conductive or emissive compositions

Light sensitive

252512, 252518, 136258, H01C 1300

Patent

active

044091346

ABSTRACT:
A semi-amorphous, photoelectric conversion semiconductor which is formed of a mixture of a microcrystalline semiconductor and a non-crystalline semiconductor and in which the mixture is doped with a dangling bond neutralizer, such as hydrogen, chlorine or fluorine, and the microcrystalline semiconductor has a lattice strain and a particle size of 5 to 200 A.

REFERENCES:
patent: 4042447 (1977-08-01), Reitz
patent: 4042526 (1977-08-01), Asakara et al.
patent: 4222902 (1980-09-01), Huffman
patent: 4265991 (1981-05-01), Hirai

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