Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...
Patent
1985-05-10
1987-10-27
Kittle, John E.
Radiation imagery chemistry: process, composition, or product th
Diazo reproduction, process, composition, or product
Composition or product which contains radiation sensitive...
430287, 430285, 522 99, 522 18, 522 65, 522 13, 522 17, 522 34, 522 39, 522 59, 522 49, 522 62, 522 24, 522 27, 522 28, G03C 154, G03C 160
Patent
active
047029900
ABSTRACT:
The present invention provides a photosensitive resin composition used to form a top resist layer of a multilayer resist system, the composition comprising a photosensitive polyphenylsilsesquioxane represented by the following general formula (I) of: ##STR1## wherein X is selected from the group consisting of acryloyloxymethyl, methacryloyloxymethyl, and cinnamoyloxymethyl; and l, m and n are zero or positive integers but l and m do not take the value of zero simultaneously; and a bisazide compound added to act as a cross-linking agent.
The photosensitive resin composition has high sensitivity to UV light and excellent resistance to reactive ion etching under oxygen gas (O.sub.2 RIE).
REFERENCES:
patent: 3695886 (1972-10-01), Clecak et al.
patent: 3969543 (1976-07-01), Roberts et al.
patent: 4041190 (1977-08-01), Dubois et al.
patent: 4292398 (1981-09-01), Rubner et al.
patent: 4469778 (1984-09-01), Iwayanagi et al.
patent: 4507384 (1985-03-01), Morita et al.
T. Iwayanagi et al, "Azide Photoresists for Deep U.V. Lithography", Journal of the Electrochemical Society(USA), vol. 127, No. 12, Dec. 1980, pp. 2759-2760.
T. Tsunoda et al, "Spectral Sensitization of Bisazide Compounds", Photographic Science and Engineering, vol. 17, No. 4, Jul./Aug. 1973, pp. 390-393.
Microcircuit Engineering 81, Sep. 28-30, 1981, Switzerland, Swiss Federal Institute of Technology Lausenne.
Hatzakis et al, "Double Layer Resist Systems for High Resolution Photography", Provisional Program, No. 386, IBM, Thomas J. Watson Research Center, (11 pages).
Tanaka et al, "Preparation and Resolution Characteristics of a Novel Silicon Based Negative Resist", 127th Meeting of American Chemical Society at St. Louis, Apr. 8-13, 1984.
Imamura Saburo
Kogure Osamu
Morita Masao
Tamamura Toshiaki
Tanaka Akinobu
Hamilton Cynthia
Kittle John E.
Nippon Telegraph and Telephone Corporation
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