Coherent light generators – Particular active media – Semiconductor
Patent
1993-04-28
1994-09-27
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 43, 257 12, 257200, 257201, 437129, H01S 319
Patent
active
053512553
ABSTRACT:
An inverted integrated heterostructure includes an optical emission heterostructure formed of Group II-VI compound semiconductor materials having first and second opposing faces and including a layer of p-type zinc selenide or an alloy thereof at the first face. A zinc mercury selenide or a zinc telluride selenide layer is formed on the layer of p-type zinc selenide or an alloy thereof, and a mercury selenide layer is formed on the zinc mercury selenide or zinc telluride selenide layer, opposite the optical emission heterostructure. An ohmic electrode is formed on the mercury selenide layer opposite the zinc mercury selenide or a zinc telluride selenide layer, and a transparent ohmic electrode is formed on the second face of the optical emission heterostructure for allowing optical emissions from the optical emission heterostructure to pass therethrough. The ohmic electrode is preferably an optically reflecting ohmic electrode for reflecting optical emissions from the optical emission heterostructure back into the optical emission heterostructure. A substrate is also preferably included on the ohmic electrode opposite the mercury selenide layer. The substrate is preferably an electrically and thermally conducting substrate. The integrated heterostructure may be formed by forming an optical emission heterostructure including an epitaxial ohmic contact on a first substrate, bonding the ohmic contact to a second substrate and then removing the first substrate.
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Epps Georgia Y.
North Carolina State University of Raleigh
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