Thin film transistor and method of making the same

Details Thin film transistor and method of making the same Thin film transistor and method of making the same

1988-01-04

1990-07-24

James, Andrew J.

357 4, 357 6, 357 2315, 357 41, 357 49, 357 52, 357 63, 357 91, H01L 2978, H01L 2712, H01L 4902

Patent

active

049438387

ABSTRACT:
A source electrode and a drain electrode are formed apart on an insulating substrate, and a semiconductor layer is formed on the substrate between the source and drain electrodes. An insulating organic molecular film is formed all over the source and drain electrodes and the semiconductor layer. Ions are implanted into a selected top surface region of the insulating organic molecular film, corresponding to the semiconductor layer, by which chains of molecules in the surface region are cut to form free carbon, providing a conductive gate electrode.

REFERENCES:
patent: 4770498 (1988-09-01), Aoki et al.

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