Thin film semiconductor device and method of fabricating the sam

Details Thin film semiconductor device and method of fabricating the sam Thin film semiconductor device and method of fabricating the sam

1988-03-10

1990-07-24

Hille, Rolf

Fishing, trapping, and vermin destroying

357 64, 437937, 437 21, H01L 2978, H01L 29167

Patent

active

049438379

ABSTRACT:
A thin film transistor and a method of fabricating the transistor are disclosed. The gate electrode of this thin film transistor is made small in thickness so that active hydrogen for hydrogenating passivation can penetrate in a surface layer of channel region having substantially uniform thickness, through the gate electrode. Thus, hydrogenation can be effectively carried out for the thin film transistor, independently of the length of a channel formed in the transistor.

REFERENCES:
patent: 3849204 (1974-11-01), Fowler
patent: 4772927 (1988-09-01), Saito et al.
Pollack et al., "Hydrogen Passivation of Polysilicon MOSFET's from a Plasma Nitride Source", IEEE Electron Device Letters, vol. EDL-5, No. 11, Nov. 1984, pp. 468-470.

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