Thin film semiconductor device and method of fabricating the sam

Fishing – trapping – and vermin destroying

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357 64, 437937, 437 21, H01L 2978, H01L 29167

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active

049438379

ABSTRACT:
A thin film transistor and a method of fabricating the transistor are disclosed. The gate electrode of this thin film transistor is made small in thickness so that active hydrogen for hydrogenating passivation can penetrate in a surface layer of channel region having substantially uniform thickness, through the gate electrode. Thus, hydrogenation can be effectively carried out for the thin film transistor, independently of the length of a channel formed in the transistor.

REFERENCES:
patent: 3849204 (1974-11-01), Fowler
patent: 4772927 (1988-09-01), Saito et al.
Pollack et al., "Hydrogen Passivation of Polysilicon MOSFET's from a Plasma Nitride Source", IEEE Electron Device Letters, vol. EDL-5, No. 11, Nov. 1984, pp. 468-470.

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