Semiconductor device having reduced contact resistance between a

Details Semiconductor device having reduced contact resistance between a Semiconductor device having reduced contact resistance between a

1992-07-27

1994-09-27

Sikes, William L.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257189, 257190, 257191, 257194, H01L 2916, H01L 29205

Patent

active

053511280

ABSTRACT:
A field-effect transistor or a bipolar transistor may be provided in which the contact resistance between a channel layer or base layer and a contact layer are reduced. For example, an InGaAs buffer layer may be formed on the substrate side of an InGaAs channel layer of a field-effect transistor and by the bypassing effect that carriers pass through this InGaAs buffer layer, the InGaAs channel layer comes in contact with the contact layer with a low resistance. The contact resistance between the InGaAs channel layer and the contact layer can be reduced to 10 ohm per a width of 10.mu.m, and as a result, the value of transconductance factor K of a field-effect transistor can be increased in 14 mA/V.sup.2 per a width of 10.mu.m.

REFERENCES:
patent: 4608586 (1986-08-01), Kim
patent: 4980731 (1990-12-01), Hida
patent: 5124762 (1992-06-01), Childs et al.
patent: 5144379 (1992-09-01), Eshita et al.
Selective growth of Pt-GaAs layers for extremely low base-resistance HBTs, Microelectronics Research Laboratories, NEC Corporation, H. Shimawaki, N. Furuhata, K. Honjo, pp. 25-30 no date.
49th Annual Device Research Conference, Jun. 17-19, 1991, Session IIIB-6 "0.2 um Gate AlGaAs HIGFET with a (111) Face of n-GaAs Selectively Grown by MOCVD", Y. Umemoto et al.

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